CMOS-Nano Hybrid Research of CNSE NanoDesign and Modeling Group

Tag : Lead Wires

Abstract:
Abstract:
The marriage of nanotechnology and CMOS technology will lead toCMOS-nano hybrid technology, which can dramatically advance thedevelopment of future integrated circuits (ICs). The CNSENanoDesign and Modeling (NDM) Group has made new progress indeveloping CMOS-nano hybrid technologies including the developmentof new interconnect-based CMOS-hybrid circuits and newreconfigurable structures utilizing nanojunction devices. These newmethods open new opportunities to build next generation ICs and areexpected to have a huge impact to world-wide IC industries.

July 25th, 2008 CMOS-Nano Hybrid Research of CNSE NanoDesign and Modeling Group
The future of the hundred-billion dollar semiconductor industryrelies on the development of novel nanoelectronic devices, circuitsand design approaches. Instead of completely replacing CMOStechnology, non-conventional nanotechnology is expected to behybrid with the CMOS systems. Such CMOS-nano hybrid systems try toutilize the advantages of both traditional CMOS devices and novelnanowire/nanotubes materials, which will enhance IC performances inthe near future, and create breakthroughs in the long run.
The CNSE NanoDesign and Modeling (NDM) Group has carried outpioneer research in developing new CMOS-nano hybrid technologies.The new results are in two directions:
" Development of CMOS-nano hybrid circuits using newnanointerconnect structures
" Building CMOS-nano hybrid reconfigurable structures based onnanojunction devices

Development of CMOS-nano hybrid circuits using new nanointerconnectstructures

The move towards nanoscale ICs poses new challenges to on-chipinterconnect design. The currently used Cu interconnect is highlysusceptible to electro-migration at high current densities and havelow reliability in operation. The resistivity of Cu increases witha decrease in dimensions due to electron surface scattering andgrain boundary scattering, which leads to a large interconnectdelay and a low current density. Therefore, innovative interconnectmaterials are being extensively studied as next-generationinterconnects.