RFMD Releases GaN CATV Amplifier Modules
[2008-7-16]
Tag : CATV Module
Greensboro, NC - RF Micro Devices, Inc. (RFMD) recently releasedthe company's first gallium nitride (GaN) based CATV amplifier modules . The D10040200PH1 and D10040230PH1 are designed for use as powerdoubler amplifiers in current and next generation CATVinfrastructure applications, including line amplification andhybrid fiber coaxial (HFC) optical nodes.
The D10040200PH1 and D10040230PH1 feature 20 dB and 23 dB of gain,respectively, and are the first power doubler amplifier modules toutilize an ultra-linear, high-efficiency GaN process technology. Bycombining multiple compound semiconductor technologies in a highlyintegrated, hybrid amplifier module RFMD designers are able toproduce unmatched performance across all critical multi-carrierdistortion parameters while also increasing output power capabilityand efficiency. With this unique blend of performance attributes,the D10040200PH1 and D10040230PH1 deliver significant improvementsover competing devices in all key parameters and provide the utmostin design flexibility all while maintaining the ease of use CATVinfrastructure original equipment manufacturers (OEMs) have come toexpect from industry-standard SOT115J packaged amplifier modules.
As an example, CATV infrastructure designers can utilize either theD10040200PH1 or D10040230PH1 in HFC optical nodes to increase finalpower output by 2 to 3 dBmV over competing devices whilemaintaining equivalent multi-carrier distortion performance, inparticular Carrier to Intermodulation Noise (CIN) levels.Alternatively, when best-in-class CIN performance is desired, RFoutput drive level may be reduced with minimal external tuning --easing implementation for equipment OEMs.
Greensboro, NC - RF Micro Devices, Inc. (RFMD) recently releasedthe company's first gallium nitride (GaN) based CATV amplifier modules . The D10040200PH1 and D10040230PH1 are designed for use as powerdoubler amplifiers in current and next generation CATVinfrastructure applications, including line amplification andhybrid fiber coaxial (HFC) optical nodes.
The D10040200PH1 and D10040230PH1 feature 20 dB and 23 dB of gain,respectively, and are the first power doubler amplifier modules toutilize an ultra-linear, high-efficiency GaN process technology. Bycombining multiple compound semiconductor technologies in a highlyintegrated, hybrid amplifier module RFMD designers are able toproduce unmatched performance across all critical multi-carrierdistortion parameters while also increasing output power capabilityand efficiency. With this unique blend of performance attributes,the D10040200PH1 and D10040230PH1 deliver significant improvementsover competing devices in all key parameters and provide the utmostin design flexibility all while maintaining the ease of use CATVinfrastructure original equipment manufacturers (OEMs) have come toexpect from industry-standard SOT115J packaged amplifier modules.
As an example, CATV infrastructure designers can utilize either theD10040200PH1 or D10040230PH1 in HFC optical nodes to increase finalpower output by 2 to 3 dBmV over competing devices whilemaintaining equivalent multi-carrier distortion performance, inparticular Carrier to Intermodulation Noise (CIN) levels.Alternatively, when best-in-class CIN performance is desired, RFoutput drive level may be reduced with minimal external tuning --easing implementation for equipment OEMs.
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